Contact resistance is an important parameter of pogo pin connector. Generally speaking, the contact resistance of a connector actually refers to the characteristic of the product that prevents the flow of current. The real contact resistance of the pogo pin connector consists of the following parts:
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Concentrated resistance
The resistance shown due to the contraction (or concentration) of the current lines when current passes through the actual contact surface. This is called lumped resistance or shrinkage resistance.
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Film layer resistance
Film layer resistance due to contact with surface film and other contaminants. From the analysis of the contact surface state, the surface pollution film can be divided into a more solid film layer and a looser impurity pollution layer. Therefore, to be precise, the film resistance can also be called interface resistance.
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Conductor resistance
When actually measuring the contact resistance of the pogopin connector, it is always measured at the contact terminal. Therefore, the actual measured contact resistance also includes the conductor resistance of the contacts outside the contact surface and the lead wire itself. Conductor resistance mainly depends on the conductive properties of the metal material itself, and its relationship with the surrounding ambient temperature can be expressed by the temperature coefficient. To facilitate the distinction, the lumped resistance plus the film layer resistance is called the real contact resistance. The actual measured resistance including conductor resistance is called the total contact resistance.
The smaller the contact resistance, the larger the current. CFE currently has special solution options for some high-current 3-60A industries as well as high-voltage and high-current charging pin solutions in the field of new energy charging. In addition, CFE also provides customers with a one-stop customized pogo pin magnetic connection charging solution. CFE provides innovative solutions for customer products to achieve product upgrades and technological innovation.